Confocal Raman Spectroscopy and AFM for Evaluation of Sidewalls in Type II Superlattice FPAs
نویسندگان
چکیده
We propose to utilize confocal Raman spectroscopy combined with high resolution atomic force microscopy (AFM) for nondestructive characterisation of the sidewalls of etched and passivated small pixel (24μm×24μm) focal plane arrays (FPA) fabricated using LW/LWIR InAs/GaSb type-II strained layer superlattice (T2SL) detector material. Special high aspect ratio Si and GaAs AFM probes, with tip length of 13μm and tip aperture less than 7◦, allow characterisation of the sidewall morphology. Confocal microscopy enables imaging of the sidewall profile through optical sectioning. Raman spectra measured on etched T2SL FPA single pixels enable us to quantify the non-uniformity of the mesa delineation process.
منابع مشابه
Passivation of W-structured type-II superlattice long-wave infrared photodiodes
A critical step in developing type-II superlattice (T2SL) based LWIR focal plane array (FPA) technology is to achieve high performance levels in FPA pixel-sized devices having 20-40 μm pitch. At this scale, device performance tends to be limited by surface effects along mesa sidewalls which are etched to provide pixel isolation. While control of surface leakage has been achieved for MWIR T2SLs,...
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